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  • FDB9403-F085

FDB9403-F085

MOSFET N-CH 40V 110A TO263AB


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDB9403-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 768
  • Description: MOSFET N-CH 40V 110A TO263AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 333W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 213nC @ 10V
Rise Time 19.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 110A
Factory Lead Time 5 Weeks
Gate to Source Voltage (Vgs) 20V
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Drain to Source Breakdown Voltage 40V
Mount Surface Mount
Avalanche Energy Rating (Eas) 968 mJ
Mounting Type Surface Mount
Height 4.83mm
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Length 10.67mm
Number of Pins 3
Weight 1.31247g
Width 9.65mm
Transistor Element Material SILICON
Radiation Hardening No
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Packaging Cut Tape (CT)
Lead Free Lead Free
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 333W Tj
Element Configuration Single
See Relate Datesheet