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FDBL0210N80

MOSFET N-CH 80V 240A H-PSOF8


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDBL0210N80
  • Package: 8-PowerSFN
  • Datasheet: PDF
  • Stock: 587
  • Description: MOSFET N-CH 80V 240A H-PSOF8 (Kg)

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Details

Tags

Parameters
JESD-30 Code R-PSSO-F2
Number of Elements 1
Power Dissipation-Max 357W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 40V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 240A
JEDEC-95 Code MO-299A
Drain-source On Resistance-Max 0.002Ohm
Avalanche Energy Rating (Eas) 512 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Number of Pins 8
Weight 850.0521mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet