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  • FDC637AN

FDC637AN

FDC637AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDC637AN
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 888
  • Description: FDC637AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Radiation Hardening No
Terminal Form GULL WING
Current Rating 6.2A
REACH SVHC No SVHC
Number of Elements 1
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Turn On Delay Time 9 ns
Contact Plating Tin
Mount Surface Mount
FET Type N-Channel
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 6.2A, 4.5V
Weight 36mg
Transistor Element Material SILICON
Vgs(th) (Max) @ Id 1.5V @ 250μA
Operating Temperature -55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 10V
Packaging Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Published 1999
Series PowerTrench®
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 13ns
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Pbfree Code yes
Vgs (Max) ±8V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 13 ns
Turn-Off Delay Time 26 ns
Number of Terminations 6
Continuous Drain Current (ID) 6.2A
ECCN Code EAR99
Threshold Voltage 820mV
Resistance 24mOhm
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Subcategory FET General Purpose Power
Nominal Vgs 820 mV
Voltage - Rated DC 20V
Height 1mm
Technology MOSFET (Metal Oxide)
Length 3mm
Width 1.7mm
Terminal Position DUAL
See Relate Datesheet