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  • FDC640P

FDC640P

FDC640P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDC640P
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 239
  • Description: FDC640P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 53mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -4.5A
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.5mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -1 V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet