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  • FDC6561AN

FDC6561AN

FDC6561AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDC6561AN
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 985
  • Description: FDC6561AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 95mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 2.5A
Number of Elements 2
Voltage 30V
Element Configuration Dual
Current 24A
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 6 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V
Rise Time 10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
See Relate Datesheet