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FDC8602

FDC8602 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDC8602
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 221
  • Description: FDC8602 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 35 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 690mW
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 690mW
Turn On Delay Time 3.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Rise Time 1.7ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 5.4 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage 3.2V
JEDEC-95 Code MO-193AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.35Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Height 1.1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet