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  • FDD10N20LZTM

FDD10N20LZTM

FDD10N20LZTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD10N20LZTM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 184
  • Description: FDD10N20LZTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Length 6.73mm
Number of Terminations 2
Width 6.22mm
ECCN Code EAR99
Radiation Hardening No
Terminal Finish Tin (Sn)
RoHS Status ROHS3 Compliant
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Factory Lead Time 11 Weeks
Transistor Application SWITCHING
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Rds On (Max) @ Id, Vgs 360m Ω @ 3.8A, 10V
Mount Surface Mount
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 585pF @ 25V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Weight 260.37mg
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Transistor Element Material SILICON
Rise Time 15ns
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Packaging Tape & Reel (TR)
Fall Time (Typ) 25 ns
Series UniFET™
Turn-Off Delay Time 55 ns
JESD-609 Code e3
Continuous Drain Current (ID) 7.6A
Pbfree Code yes
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Part Status Active
Drain to Source Breakdown Voltage 200V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Height 2.39mm
See Relate Datesheet