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  • FDD3860

FDD3860

FDD3860 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD3860
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 249
  • Description: FDD3860 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
FET Type N-Channel
Contact Plating Tin
Transistor Application SWITCHING
Mount Surface Mount
Rds On (Max) @ Id, Vgs 36m Ω @ 5.9A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 50V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Weight 260.37mg
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Transistor Element Material SILICON
Rise Time 10ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 2006
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Series PowerTrench®
Turn-Off Delay Time 24 ns
JESD-609 Code e3
Continuous Drain Current (ID) 6.2A
Threshold Voltage 3.8V
Pbfree Code yes
Part Status Active
Gate to Source Voltage (Vgs) 20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
ECCN Code EAR99
Height 2.39mm
Resistance 36MOhm
Length 6.73mm
Subcategory FET General Purpose Power
Width 6.22mm
Radiation Hardening No
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Terminal Form GULL WING
RoHS Status ROHS3 Compliant
Lead Free Lead Free
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 16 ns
Factory Lead Time 8 Weeks
See Relate Datesheet