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FDD6760A

MOSFET NCH 25V 27A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD6760A
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: -
  • Stock: 839
  • Description: MOSFET NCH 25V 27A DPAK (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.7W Ta 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 13V
Current - Continuous Drain (Id) @ 25°C 27A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 72 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet