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  • FDD6796A

FDD6796A

FDD6796A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD6796A
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 702
  • Description: FDD6796A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.7W Ta 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1780pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 67A
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 40 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet