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  • FDD86113LZ

FDD86113LZ

FDD86113LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDD86113LZ
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 282
  • Description: FDD86113LZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Weight 260.37mg
Length 6.73mm
Width 6.22mm
Transistor Element Material SILICON
Radiation Hardening No
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 29W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 4.2A, 10V
Factory Lead Time 4 Weeks
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 50V
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 5.5A Tc
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 4.2A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.5A
Number of Pins 3
Drain to Source Breakdown Voltage 100V
Height 2.39mm
See Relate Datesheet