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FDFM2N111

MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDFM2N111
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 951
  • Description: MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 165.33333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium (Ni/Pd)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating 4A
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 273pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 4A
Collector Emitter Breakdown Voltage 2V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)
Height 750μm
Length 3mm
Width 3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet