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  • FDFM2P110

FDFM2P110

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDFM2P110
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 343
  • Description: Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mO (Kg)

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Details

Tags

Parameters
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3.5A
JEDEC-95 Code MO-229WEEA
Collector Emitter Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Height 750μm
Length 3mm
Width 3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 9mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 140MOhm
Terminal Finish Nickel/Palladium (Ni/Pd)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Current Rating -3.5A
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8 ns
See Relate Datesheet