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  • FDFME2P823ZT

FDFME2P823ZT

MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDFME2P823ZT
  • Package: 6-UFDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 126
  • Description: MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ESD PROTECTION
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 4.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 142m Ω @ 2.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Rise Time 4.8ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.6A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.3A
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Nominal Vgs -600 mV
Feedback Cap-Max (Crss) 75 pF
Height 550μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet