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FDFME3N311ZT

MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDFME3N311ZT
  • Package: 6-UFDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 307
  • Description: MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 1 V
Height 550μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 6
Weight 25.2mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
See Relate Datesheet