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  • FDG316P

FDG316P

FDG316P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDG316P
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 556
  • Description: FDG316P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Resistance 190MOhm
Subcategory Other Transistors
Gate to Source Voltage (Vgs) 20V
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Drain to Source Breakdown Voltage -30V
Height 1mm
Terminal Position DUAL
Length 2mm
Terminal Form GULL WING
Current Rating 1.6A
Width 1.25mm
Radiation Hardening No
Number of Elements 1
REACH SVHC No SVHC
Power Dissipation-Max 750mW Ta
RoHS Status ROHS3 Compliant
Element Configuration Single
Lead Free Lead Free
Factory Lead Time 10 Weeks
Operating Mode ENHANCEMENT MODE
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Power Dissipation 750mW
Mount Surface Mount
Turn On Delay Time 8 ns
Mounting Type Surface Mount
FET Type P-Channel
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Application SWITCHING
Weight 28mg
Rds On (Max) @ Id, Vgs 190m Ω @ 1.6A, 10V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Vgs(th) (Max) @ Id 3V @ 250μA
Published 2000
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 15V
Series PowerTrench®
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
JESD-609 Code e3
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Pbfree Code yes
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Part Status Active
Fall Time (Typ) 9 ns
Turn-Off Delay Time 14 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Continuous Drain Current (ID) 1.6A
Number of Terminations 6
Threshold Voltage -1.6V
See Relate Datesheet