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FDG6332C
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prices and inventories about the part.
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 300MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Current Rating | 700mA |
| Number of Elements | 2 |
| Voltage | 20V |
| Element Configuration | Dual |
| Current | 7A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 700mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 700mA 600mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Rise Time | 14ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 700mA |
| Threshold Voltage | 1.1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Height | 1.1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet