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  • FDI038AN06A0

FDI038AN06A0

MOSFET 60V 80a 0.0038 Ohms/VGS=10V


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDI038AN06A0
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 220
  • Description: MOSFET 60V 80a 0.0038 Ohms/VGS=10V (Kg)

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Details

Tags

Parameters
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Rise Time 144ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-262AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0038Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 625 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 80A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
See Relate Datesheet