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FDI9406-F085

MOSFET N-CH 40V 110A TO262AB


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDI9406-F085
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 850
  • Description: MOSFET N-CH 40V 110A TO262AB (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 176W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 176W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Rise Time 48ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 110A
JEDEC-95 Code TO-262AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
See Relate Datesheet