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FDMA86151L

FDMA86151L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMA86151L
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 392
  • Description: FDMA86151L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.088Ohm
Drain to Source Breakdown Voltage 100V
Feedback Cap-Max (Crss) 5 pF
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 88m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 10V
Rise Time 1.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet