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  • FDMC510P

FDMC510P

FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC510P
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 834
  • Description: FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Avalanche Energy Rating (Eas) 37 mJ
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Height 750μm
Length 3.3mm
Number of Elements 1
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
Power Dissipation-Max 2.3W Ta 41W Tc
RoHS Status ROHS3 Compliant
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 12A, 4.5V
Factory Lead Time 23 Weeks
Vgs(th) (Max) @ Id 1V @ 250μA
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Gold
Input Capacitance (Ciss) (Max) @ Vds 7860pF @ 10V
Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 12A Ta 18A Tc
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 116nC @ 4.5V
Package / Case 8-PowerWDFN
Number of Pins 8
Rise Time 34ns
Weight 165.33333mg
Transistor Element Material SILICON
Drain to Source Voltage (Vdss) 20V
Operating Temperature -55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Packaging Tape & Reel (TR)
Published 2006
Vgs (Max) ±8V
Series PowerTrench®
Fall Time (Typ) 170 ns
JESD-609 Code e4
Turn-Off Delay Time 338 ns
Pbfree Code yes
Part Status Active
Continuous Drain Current (ID) 12A
Threshold Voltage -500mV
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 8V
Number of Terminations 5
Drain Current-Max (Abs) (ID) 54A
ECCN Code EAR99
Drain to Source Breakdown Voltage -20V
Subcategory Other Transistors
Pulsed Drain Current-Max (IDM) 50A
Technology MOSFET (Metal Oxide)
See Relate Datesheet