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FDMC7582

MOSFET PT5 100V/20V NCH POWERTRENCH MOSFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC7582
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 385
  • Description: MOSFET PT5 100V/20V NCH POWERTRENCH MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 8.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 16.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1795pF @ 13V
Current - Continuous Drain (Id) @ 25°C 16.7A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.6 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 16.7A
JEDEC-95 Code MO-229
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 60A
Height 1.05mm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet