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FDMC8010ET30

MOSFET N-CH 30V 30A 8-PQFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC8010ET30
  • Package: 8-PowerWDFN
  • Datasheet: -
  • Stock: 106
  • Description: MOSFET N-CH 30V 30A 8-PQFN (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 152.7mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.8W Ta 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5860pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta 174A Tc
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 174A
JEDEC-95 Code MO-240BA
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.0013Ohm
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 153 mJ
Feedback Cap-Max (Crss) 250 pF
Turn Off Time-Max (toff) 75ns
Turn On Time-Max (ton) 42ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet