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FDMC8026S

MOSFET 30V N-Channel PowerTrench SyncFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC8026S
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 325
  • Description: MOSFET 30V N-Channel PowerTrench SyncFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.4W Ta 36W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 36W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3165pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta 21A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 66 mJ
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet