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  • FDMC86320

FDMC86320

N-Channel Power Trench® MOSFET 80V, 22A, 11.7mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC86320
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 673
  • Description: N-Channel Power Trench® MOSFET 80V, 22A, 11.7mO (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.7m Ω @ 10.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2640pF @ 40V
Current - Continuous Drain (Id) @ 25°C 10.7A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 60 mJ
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet