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  • FDMC8854

FDMC8854

MOSFET N-CH 30V 15A POWER33


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC8854
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 159
  • Description: MOSFET N-CH 30V 15A POWER33 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 5.7MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2W Ta 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3405pF @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Dual Supply Voltage 30V
Nominal Vgs 1.9 V
Height 725μm
Length 3.3mm
Width 3.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet