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  • FDMC8884

FDMC8884

FDMC8884 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMC8884
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 728
  • Description: FDMC8884 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Fall Time (Typ) 2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 24 mJ
Nominal Vgs 1.9 V
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
Mount Surface Mount
REACH SVHC No SVHC
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
RoHS Status RoHS Compliant
Number of Pins 8
Weight 200mg
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 19MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 18W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 685pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet