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  • FDME430NT

FDME430NT

MOSFET 30V N-Channel PowerTrench MOSFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDME430NT
  • Package: 6-PowerUFDFN
  • Datasheet: PDF
  • Stock: 661
  • Description: MOSFET 30V N-Channel PowerTrench MOSFET (Kg)

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Details

Tags

Parameters
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 2.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 75 pF
Height 500μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerUFDFN
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet