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FDME510PZT

FDME510PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDME510PZT
  • Package: 6-PowerUFDFN
  • Datasheet: PDF
  • Stock: 324
  • Description: FDME510PZT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerUFDFN
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 2.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 93 ns
Continuous Drain Current (ID) 6A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.037Ohm
Drain to Source Breakdown Voltage -20V
Nominal Vgs -500 mV
Height 500μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet