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FDMQ8205A

FDMQ8205A datasheet pdf and PMIC - OR Controllers, Ideal Diodes product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMQ8205A
  • Package: 12-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 342
  • Description: FDMQ8205A datasheet pdf and PMIC - OR Controllers, Ideal Diodes product details from ON Semiconductor stock available at Utmel(Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 12-WDFN Exposed Pad
Weight 210mg
Transistor Element Material SILICON
Operating Temperature -40°C~85°C
Packaging Tape & Reel (TR)
Published 2017
Series GreenBridge™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Type Bridge Rectifier
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Applications Power Over Ethernet (PoE)
Max Power Dissipation 780mW
Voltage - Supply 57V Max
Terminal Position DUAL
Terminal Form NO LEAD
Number of Outputs 2
Output Voltage 57V
Number of Elements 4
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Current - Supply 400μA
FET Type N and P-Channel
Transistor Application SWITCHING
Ratio - Input:Output Bridge (2)
Drain Current-Max (Abs) (ID) 1.7A
Drain-source On Resistance-Max 0.051Ohm
Internal Switch(s) Yes
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 125°C
Ambient Temperature Range High 85°C
Height 800μm
RoHS Status ROHS3 Compliant

FDMQ8205A Description


FDMQ8205A is GreenBridgeTM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A is configured with low rDS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications.

FDMQ8205A GreenBridgeTM2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage.



FDMQ8205A Features


  • Low Power Loss GreenBridgeTM Replaces Diode Bridge

  • Self Driving Circuitry for MOSFETs

  • Low rDS(on) 100V Rated MOSFETs

  • Maximizing Available Power and Voltage

  • Eliminating Thermal Design Problems

  • IEEE802.3 at Compatible

  • Meet Detection and Classification Requirement

  • Work with 2 and 4-pair Architecture

  • Small Backfeed Voltage

  • Compact MLP 4.5x5 Package



FDMQ8205A Applications


  • IP Phones

  • Network Cameras

  • Wireless Access Points

  • Thin Clients

  • Microcell

  • Femtocell