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FDMS8025S

FDMS8025S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMS8025S
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 651
  • Description: FDMS8025S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 4.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.7V
JEDEC-95 Code MO-240AA
Factory Lead Time 18 Weeks
Gate to Source Voltage (Vgs) 20V
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Drain Current-Max (Abs) (ID) 24A
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 30V
Package / Case 8-PowerTDFN
Number of Pins 8
Pulsed Drain Current-Max (IDM) 100A
Weight 68.1mg
Avalanche Energy Rating (Eas) 66 mJ
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Height 1.05mm
Packaging Tape & Reel (TR)
Length 5mm
Published 2010
Width 6mm
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Radiation Hardening No
Pbfree Code yes
Part Status Active
REACH SVHC No SVHC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Resistance 2.8MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
See Relate Datesheet