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  • FDMS8026S

FDMS8026S

MOSFET 30V N-Channel PowerTrench SyncFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMS8026S
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 382
  • Description: MOSFET 30V N-Channel PowerTrench SyncFET (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 33 mJ
Nominal Vgs 1.5 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 74mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2280pF @ 15V
Current - Continuous Drain (Id) @ 25°C 19A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 3.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 1.5V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0043Ohm
See Relate Datesheet