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FDMS8460

FDMS8460 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMS8460
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 971
  • Description: FDMS8460 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.2MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Voltage 40V
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7205pF @ 20V
Current - Continuous Drain (Id) @ 25°C 25A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 40V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet