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FDMS86101DC

FDMS86101DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDMS86101DC
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 174
  • Description: FDMS86101DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 14 ns
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
FET Type N-Channel
Mount Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 14.5A, 10V
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 4V @ 250μA
Number of Pins 8
Weight 90mg
Input Capacitance (Ciss) (Max) @ Vds 3135pF @ 50V
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25°C 14.5A Ta 60A Tc
Operating Temperature -55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Packaging Tape & Reel (TR)
Series Dual Cool™, PowerTrench®
Rise Time 8.2ns
JESD-609 Code e3
Pbfree Code yes
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Number of Terminations 5
Turn-Off Delay Time 25 ns
ECCN Code EAR99
Continuous Drain Current (ID) 14.5A
Resistance 7.5MOhm
JEDEC-95 Code MO-240AA
Terminal Finish Tin (Sn)
Gate to Source Voltage (Vgs) 20V
Subcategory FET General Purpose Power
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage 100V
Technology MOSFET (Metal Oxide)
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 150°C
Height 1.05mm
Terminal Form FLAT
Length 5.1mm
Width 5.85mm
JESD-30 Code R-PDSO-F5
Radiation Hardening No
RoHS Status ROHS3 Compliant
Number of Elements 1
Lead Free Lead Free
Number of Channels 1
Power Dissipation-Max 3.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet