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FDP023N08B-F102

MOSFET N-CH 75V 120A TO-220-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP023N08B-F102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 817
  • Description: MOSFET N-CH 75V 120A TO-220-3 (Kg)

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IMPORTANT NOTICE

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.346g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 245W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 245W
Turn On Delay Time 41 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.35m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13765pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 71ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 111 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet