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  • FDP027N08B-F102

FDP027N08B-F102

MOSFET N-CH 80V 120A TO-220-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP027N08B-F102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 178
  • Description: MOSFET N-CH 80V 120A TO-220-3 (Kg)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 246W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 246W
Turn On Delay Time 47 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 87 ns
Continuous Drain Current (ID) 223A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet