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FDP053N08B-F102
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Avalanche Energy Rating (Eas) | 365 mJ |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| RoHS Status | ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Lead Free | Lead Free |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 146W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 146W |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.3m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5960pF @ 40V |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Mount | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Drain to Source Voltage (Vdss) | 80V |
| Weight | 1.8g |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~175°C TJ |
| Continuous Drain Current (ID) | 75A |
| Packaging | Tube |
| JEDEC-95 Code | TO-220AB |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0053Ohm |
| Part Status | Active |
| Pulsed Drain Current-Max (IDM) | 480A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| DS Breakdown Voltage-Min | 80V |
| Number of Terminations | 3 |
See Relate Datesheet