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  • FDP075N15A-F102

FDP075N15A-F102

MOSFET N-CH 150V 130A TO-220-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP075N15A-F102
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 641
  • Description: MOSFET N-CH 150V 130A TO-220-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 6.25MOhm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 333W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 333W
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 75V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 130A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 522A
Avalanche Energy Rating (Eas) 588 mJ
Max Junction Temperature (Tj) 175°C
Height 19.85mm
Length 10.36mm
Width 4.672mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet