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  • FDP100N10

FDP100N10

FDP100N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP100N10
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 684
  • Description: FDP100N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection DRAIN
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 265ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 115 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10MOhm
See Relate Datesheet