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  • FDP12N50NZ

FDP12N50NZ

FDP12N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP12N50NZ
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 106
  • Description: FDP12N50NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET-II™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 5.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 11.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 560 mJ
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet