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FDP8860

FDP8860 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP8860
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 783
  • Description: FDP8860 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V
Rise Time 135ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 59 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 1.6V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Pulsed Drain Current-Max (IDM) 556A
Contact Plating Tin
Mount Through Hole
Height 9.4mm
Mounting Type Through Hole
Package / Case TO-220-3
Length 10.67mm
Number of Pins 3
Width 4.83mm
Weight 1.8g
REACH SVHC No SVHC
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
RoHS Status ROHS3 Compliant
Published 2006
Lead Free Lead Free
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.5MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 80A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 254W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 254W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
See Relate Datesheet