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FDP8896

FDP8896 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDP8896
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 371
  • Description: FDP8896 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 44 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 92A
Packaging Tube
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Published 2004
Avalanche Energy Rating (Eas) 74 mJ
Series PowerTrench®
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Lead Free Lead Free
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5.9MOhm
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 92A
Number of Elements 1
Voltage 30V
Power Dissipation-Max 80W Tc
Element Configuration Single
Current 60A
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Factory Lead Time 10 Weeks
Transistor Application SWITCHING
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Rds On (Max) @ Id, Vgs 5.9m Ω @ 35A, 10V
Mount Through Hole
Vgs(th) (Max) @ Id 2.5V @ 250μA
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 16A Ta 92A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Number of Pins 3
Rise Time 103ns
See Relate Datesheet