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  • FDPC8014S

FDPC8014S

FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDPC8014S
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 336
  • Description: FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 5.1mm
Width 6.1mm
RoHS Status ROHS3 Compliant
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 207.7333mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.3W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
Power - Max 2.1W 2.3W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V
Current - Continuous Drain (Id) @ 25°C 20A 41A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 110A
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 73 mJ
See Relate Datesheet