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FDPF2710T

FDPF2710T datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDPF2710T
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 392
  • Description: FDPF2710T datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 42.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection ISOLATED
Turn On Delay Time 80 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 101nC @ 10V
Rise Time 252ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 154 ns
Turn-Off Delay Time 112 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 3.9V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Nominal Vgs 3.9 V
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
See Relate Datesheet