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FDPF8N60ZUT

MOSFET N-CH 600V TO-220F-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDPF8N60ZUT
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 309
  • Description: MOSFET N-CH 600V TO-220F-3 (Kg)

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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 34.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 34.5W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.35 Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Factory Lead Time 9 Weeks
Rise Time 30ns
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Mount Through Hole
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Through Hole
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Package / Case TO-220-3 Full Pack
Turn-Off Delay Time 55 ns
Number of Pins 3
Weight 2.27g
Continuous Drain Current (ID) 6.5A
Threshold Voltage 5V
Transistor Element Material SILICON
JEDEC-95 Code TO-220AB
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 30V
Packaging Tube
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 420 mJ
Published 2013
Height 16.07mm
Length 10.36mm
Series UniFET™
Width 4.9mm
Radiation Hardening No
JESD-609 Code e3
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pbfree Code yes
See Relate Datesheet