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FDS3890

FDS3890 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDS3890
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 442
  • Description: FDS3890 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Elements 2
Voltage 80V
Current 47A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 11 ns
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 8ns
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 175 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 21 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 44MOhm
Terminal Finish TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.7A
Time@Peak Reflow Temperature-Max (s) 30
See Relate Datesheet