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  • FDS4501H

FDS4501H

FDS4501H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDS4501H
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 434
  • Description: FDS4501H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1958pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A 5.6A
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 25 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18MOhm
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 9.3A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
See Relate Datesheet