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FDS4897C

FDS4897C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDS4897C
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 629
  • Description: FDS4897C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 29MOhm
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 6.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C 6.2A 4.4A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 15ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 18 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet