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  • FDU6N25

FDU6N25

FDU6N25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDU6N25
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 457
  • Description: FDU6N25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 4.4A
JEDEC-95 Code TO-251AA
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 12 mJ
Height 7.57mm
Length 6.8mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Weight 539mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
See Relate Datesheet