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FDY101PZ

FDY101PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FDY101PZ
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 769
  • Description: FDY101PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 150mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage -20V
Height 780μm
Length 1.7mm
Width 980μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet